Russian Microelectronics

Current-voltage characteristic and the spectrum width of electrons tunneling through W-WO2-(Au 147 - )-Al2O3-Al and Nd-Nd2O3-(Au 55 - )-Nd2O3-Nd nanosandwiches. Part II: Construction and analysis of 1D models for 3D nanosandwiches
Features of the formation of a low-resistance Ge/Au/Ni/Ti/Au ohmic contact to n-i-GaAs
Formation of a submicron GaAs MESFET gate using a four-layer dielectric dummy gate
Nonempirical simulation of chemical deposition of silicon nitride films in CVD reactors
NV-centers in diamond. Part II. Spectroscopy, spin-state identification, and quantum manipulation
Optimization of the design flow of the system on a K64-RIO crystal manufactured using the 0.18 µm technology
Production of Ti, La, Pb, Cd, Mn, Zr, and Y oxide thin films on complex surfaces of etched aluminum foils for electrolytic capacitors by the pyrolysis method of salts of organic acids
Semiclassical simulation of the diffraction of a material wave from two Coulomb centers
Silicon solar cells with Si-Ge microheterojunctions